Stoichiometry Driven Impurity Configurations in Compound Semiconductors

Stoichiometry driven impurity configurations in compound semiconductors.

Precise stoichiometry and departures therefrom in the composition of the tetrahedrally coordinated compound semiconductors allow impurity incorporation in more than one configuration. Ultrahigh resolution infrared spectroscopy of CdTe:O at low temperatures reveals a unique sharp doublet associated with the local vibrational modes of OTe in a (OTe-VCd) complex with nearest neighbor Cd vacancy VC...

Stoichiometry and doping in large gap compound semiconductors

2014 Current theoretical models on self-compensation in large gap semiconductors assume that intrinsic stoichiometric defects dominate and explain electrical properties quite satisfactorily without any contribution from impurities. Some recent results show on the contrary that impurities are in fact dominant at least at room temperature. The paper, starting from one particular material (ZnTe), ...

Control of defect structure in compound semiconductors with stoichiometry: Oxygen in CdTe

Compound Semiconductors

Hydrogen in compound semiconductors

Hydrogen can be inadvertently introduced at any of several steps in the fabrication of optoelectronic devices. The most common consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease in the electrical conductivity of the material. The most successfully applied experimental technique for directly determining the involvement of hydrogen has been infrared-ab...